Abstract
Perturbed angular correlation (PAC) measurements were performed in pure cerium dioxide using 181 Hf as the probe. The activity was introduced by ionic implantation on pure CeO 2 pressed powder. The substitutional replacement of Ce by Hf and the removal of radiation damage due to the ion implantation were achieved through thermal treatments in air at increasing temperatures up to 1323 K. Once an unperturbed cubic environment for the hafnium probes was verified through PAC measurements at room temperature, thermal treatments in low O 2 pressure were performed in order to create oxygen vacancies in the sample. Subsequent PAC measurements in the temperature range 77 to 300 K revealed the presence of static defects at low temperatures that become mobile at room temperature. The defects were identified as oxygen vacancies probably at second neighbor sites. Our results are compatible with an activation energy for oxygen vacancy hopping in the order of 0.40 eV.
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