Abstract
High-temperature electrical measurements are explained in the framework of the theory of quasi-chemical reactions between defects in solids using solubility data for In in CdTe. The free carrier density is dependent on the solubility of dopant and the electrons are compensated by both native point defects (Cd vacancies) and the In-containing associate. Calculated point defect diagrams give electron densities in good agreement with the measured values.
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