Abstract
Defects in p-InGaP produced by low-energy protons have been investigated by deep-level transient spectroscopy (DLTS). A new majority-carrier (hole) trap HP1 has been observed in low-energy proton-irradiated p-InGaP at 0.90±0.05 eV above the valance band for the first time. The HP1 introduction rate for 100-keV proton-irradiated p-InGaP is 1500 cm −1, which is 6 times higher than that (260 cm −1) for the 380-keV proton-irradiated one. Isochronal annealing is found to annihilate the proton-induced HP1 defect above 300°C that is higher than the annealing stage (100°C) for 1-MeV electron-induced H2 center in p-InGaP. The carrier removal rates are found to be 61433 and 8640 cm −1 for 100 and 380-keV proton irradiation, respectively. Proton energy-dependent effects include decrease in both the carrier removal rate and in the defect introduction rate with increase in proton energy by creating HP1 trap.
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