Abstract
Deep level transient spectroscopy has been used to observe the effect of alpha particle irradiation on n-type InP grown by metal organic chemical vapour deposition (MOCVD). Eight majority carrier emitting levels Eα1, Eα2, …, Eα8 are found to be produced as a result of this irradiation. At least two of the observed levels (Eα2 and Eα4) are found to show interesting metastable behaviour. One important result of this work is complete absence of the well-known metastable M-level (observed in electron irradiated LEC InP) in our alpha-irradiated MOCVD material.
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