Abstract
Schottky barriers, with an ideality factor between 1.02 and 1.05 and a reverse saturation current of about 10 −8 A cm 2 , have been prepared by evaporating Cr films on n-type GaAs, grown by the Czochralski method. Thermally Stimulated Capacitance (TSCAP) and Deep Level Transient Spectroscopy (DLTS) measurements were carried out on these diodes to investigate deep levels in n-GaAs. The experimental results indicate the presence of four majority carrier traps with electron emission activation energy ranging from 0.33 to 0.82 eV.
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