Abstract
Several Fe-doped InP wafers were investigated by thermally stimulated current (TSC) and thermo-electric effect spectroscopy (TEES), both in the dark and after illumination. Other deep levels besides the main deep level due to iron were investigated. A comparison between the present deep level study and other literature shows that only two levels, among those found here, are also detected in undoped n-type InP, namely, the hole trap at 0.19 eV and the electron trap at 0.35 eV. This probably means that the TSC peaks appearing at about 100 and 170 K are related to native defects and not to iron doping. >
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