Abstract
To transfer a photon with a 1.55μm wavelength into an electron in an integrated optoelectronic silicon waveguide detector, selenium-doped silicon with deep energy levels is used. The deep levels in the silicon with implanted selenium are studied. Three levels are observed and their captured cross sections, concentrations and in-depth profiles are measured.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
