Abstract
Arrays of aligned carbon nanotube (CNT) bundles were synthesized on the pre-patterned silicon substrate using thermal chemical vapor deposition. Silicon substrate was patterned with square arrays of 10 × 10 μm iron catalyst using photolithography, iron sputtering, and a lift-off process. After field emission (FE) measurement in diode configuration, CNT emitter arrays (CEAs) were decorated with cesium iodide (CsI) nano particles (NPs) using thermal evaporation with substrate heating at 300 °C. FE of pristine CEAs and CsI NPs decorated CEAs were carried out under same vacuum condition and constant inter-electrode separation. Pristine CEAs and CsI NPs decorated CEAs were characterized using scanning electron microscope, transmission electron microscope, energy-dispersive X-ray spectroscopy, X-ray diffraction, and Raman characterization. From FE comparison plots, it was observed that CsI NPs decoration on the CEAs had significantly lowered the turn-on electric field from 3.00 to 2.13 V/μm. A remarkable improvement of more than 50 % in the current density, from 11.02 to 17.33 mA/cm2, was also observed at a constant applied electric field of 5 V/μm.
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