Abstract
Achieving coherent population transfer in the solid-state is challenging compared to atomic systems due to closely spaced electronic states and fast decoherence. Here, within an atomistic pseudopotential theory, we offer recipes for the stimulated Raman adiabatic passage in embedded silicon and germanium nanocrystals. The transfer efficiency spectra display characteristic Fano resonances. By exploiting the Stark effect, we predict that transfer can be switched off with a dc voltage. As the population transfer is highly sensitive to structural variations, with a choice of a sufficiently small two-photon detuning bandwidth, it can be harnessed for addressing individual nanocrystals within an ensemble.
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