Abstract
DC high voltage photoemission electron guns with GaAs photocathodes have been used to produce polarized electron beams for nuclear physics experiments for about 3 decades with great success. In the late 1990s, Jefferson Lab adopted this gun technology for a free electron laser (FEL), but to assist with high bunch charge operation, considerably higher bias voltage is required compared to the photoguns used at the Jefferson Lab Continuous Electron Beam Accelerator Facility. The FEL gun has been conditioned above 400 kV several times, albeit encountering non‐trivial challenges with ceramic insulators and field emission from electrodes. Recently, high voltage processing with krypton gas was employed to process very stubborn field emitters. This work presents a summary of the high voltage techniques used to high voltage condition the Jefferson Lab FEL photoemission gun.
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