Abstract
Pb(Zr\(_{\mathbf{0\boldsymbol{\cdot}53}}\)Ti\(_{\mathbf{0\boldsymbol{\cdot}47}})\)O 3 (PZT) thin films were prepared on Pt/Ti/SiO 2 /Si substrate by sol–gel method. The effect of film thickness on microstructure, ferroelectric and dielectric properties was investigated. The single-phase PZT films were obtained with different thicknesses. PZT films with a thickness of 190–440 nm had better dielectric and ferroelectric properties. The epoxy/PZT film/epoxy sandwiched composites were prepared. The thickness of PZT films influenced their damping properties of the composites, and the epoxy-based composites embedded with 310 nm-thick PZT films had the largest damping loss factor of 0\(\boldsymbol{\cdot} \)915.
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