Abstract
ABSTRACTIn the Rapid-Thermal-Annealing of Si-implanted undoped semi-insulating GaAs three regimes are broadly identified. At ˜ 600°C, ion implantation damage is largely removed, as indicated by lattice-strain measurements performed by X-ray rocking curves. Between ˜ 600 – 900°C, “extended defects”, which presumably account for the long tails in the electron concentration depth profiles, are annealed. Higher annealing temperatures in this range result in profiles with successively shorter tails. Finally, beyond ˜ 900°C, “acceptor levels” in the material are revealed, which become effective in compensating the Si activation.
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