Damage profiling of Ar + -irradiated Si(100) and GaAs(100) by medium energy ion scattering

Abstract

Damage profiles of 0.5–3 keV Ar +-irradiated Si(100) and 1–3 keV Ar +-irradiated GaAs(100) were measured by medium energy ion scattering (MEIS) with an electrostatic analyzer of the modified toroidal type. We have achieved good energy and depth resolutions of 5 × 10 −3 and about 1 nm, respectively. The observed random and channeling MEIS spectra were analyzed precisely by computer-simulated spectrum fitting. The damage width (nm) determined experimentally is expressed by 5.7E 2 3 for Ar +-Si and by 4.0E 1 2 for Ar +-GaAs, where E is the Ar + energy (keV). The above energy dependences are consistent with the universal relation between the projected range and ion energy proposed by Kalbitzer and Oetzmann and with the prediction of the power approximation.