Abstract
ABSTRACT The d.c. theory of the unijunction transistor is examined find calculations are carried out for an idealized, one-dimensional model neglecting diffusion currents but taking bulk recombination effects into account. This procedure leads to u simple set of equations relating the slope of the d.c. characteristics at low emitter currents to the inter-base voltage. Measurements of the peak point current as a function of inter-base voltage are compared with calculations for a unit with a geometry approaching that assumed in the calculations. Satisfactory agreement between theory and calculations is reported.
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