Abstract
Electrical measurements on thin co-evaporated SiO/In2O3 films before and after electroforming are reported. The high-field conduction (expressed in terms of circulating currentl c and bias voltageV b) in thin film sandwich structures of Al−SiO/In2O3-Al and Cu-SiO/In2O3-Cu is found to obey a relation of the form logI c ∞V b 1/2 . The electroformed samples show voltage-controlled negative resistance, voltage memory, thermal-voltage memory and pressure-voltage memory effects and the results are explained in terms of the filamentary model of electrical conduction.
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