Abstract
The results of experimental and theoretical studies of hole distribution function and cyclotron resonance (CR) laser emission processes in uniaxially stressed p-Ge in strong crossed E ⊥ H fields are presented. The CR emission spectra were studied for various orientations of E and H fields with respect to the crystallographic axes of the p-Ge crystal. A complicated structure of CR emission spectra (instead of a single line without stress) was found to arise in stressed crystals, corresponding to transitions between different pairs of light hole Landau levels. A considerable effect of quantum deformation of the lower light hole Landau levels due to interaction and mixing of light and heavy hole states on emission spectra was found, resulting in strong broadening and shift with the stress of an emission line, corresponding to (n = 2) → (n = 1) transitions. The transitions were shown to dominate in CR emission spectra for stress larger than 400 bar. Numerical calculations of hole lifetimes and distribution function in uniaxially stressed Ge based on the quantum model of carrier dynamics in strong crossed E and H fields were carried out, taking into account the optical phonon and ionized impurity scattering processes. The results of the calculations allowed us to identify the observed CR transitions.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
