Abstract
The performance characteristic of continuous-wave (cw) InGaN multiple-quantum-well (MQW) laser diodes with optimized design parameters is reported. Room temperature, cw operation of InGaN MQW laser diodes was demonstrated with threshold current densities as low as 7 kA/cm2 and emission wavelength near 400 nm. For 2 μm × 300 μm ridge waveguide nitride laser with reflection-coated mirrors cw threshold currents of 60 mA have been obtained. CW operation was observed up to temperatures of 60 °C. The transverse and lateral optical modes of nitride lasers, toward optimization of the layer structure and ridge waveguide parameters have been analyzed. Incorporation of a thick, superlattice n-cladding layer led to a considerable improvement in the transverse beam quality. Thermal modeling indicated the importance of lowering the diode voltage and efficient heat dissipation; and specifically, the benefit of thinning the sapphire substrate for achieving room temperature cw operation.
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