Abstract
The change in superconducting transition temperature (T c ) induced by cw laser annealing has been studied for various A15 compounds. Ordering of disordered Nb 3 Sn starts to occur after a single laser scan, making possible an estimation of the activation energy for ordering at high temperatures (1000–2000°C) for times < 0.1 sec. In contrast, laser annealing of well-ordered high T c Nb 3 Sn and V 3 Si is found to alter both the resistivity and the T c . Metastable high T c Nb 3 Ge shows a marked non-monotonic dependence upon annealing temperature which is believed to arise from the formation of a low T c phase at intermediate annealing temperatures.
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