Abstract
Abstract An improved W deposition process was developed using H 2 reduction of WF 6 . In a cold wall reactor at a higher pressure (12 mbar) and at higher flows of WF 6 the step coverage was sufficient to fill up contact holes with an aspect ratio of 2. A low pressure etch back process using SF 6 /O 2 was developed, which shows no local-loading effect and produces co-planar W plugs with no W residues on topographical features. The feasibility of some planarization schemes was demonstrated.
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