Abstract
The physical and electrical properties of transitional metal nitrides: tantalum nitride, tungsten nitride and molybdenum nitride thin films deposited by thermal decomposition of metalorganic precursors of TBTDET, BTBTW, and BDBTM have been investigated. The films have an excellent step coverage over high aspect-ratio contact holes as well as low carbon concentration. Strong metal to nitrogen double bonds in the precursors preserved the cubic phase of the films during the pyrolysis process and subsequently yielded low-resistivity films. X-ray diffraction (XRD) and wavelength dispersive spectroscopy (WDS) results indicated that the as-deposited films have face centered cubic (fcc) phase polycrystalline structure. Diffusion barrier properties of these films for copper metallization were studied by SEM, TEM, diode leakage current measurement and secondary ion mass spectroscopy (SIMS) analysis. The metal nitride thin films deposited by physical-vapor-deposition (PVD) were compared to CVD films as well.
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