Abstract
We have studied the effects of underlap's length and doping on the cutoff frequency, switching delay and on/off ratio of carbon nanotube field effect transistors (CNTFETs). We have proposed underlaps with different lengths, doping levels and doping profiles. Intrinsic and fringing field capacitances, transconductance, cutoff frequency, switching time and on/off ratio have been calculated for different CNTFET designs. Proposed CNTFETs have been simulated using nonequilibrium Green's function (NEGF) method. The gate capacitance has been calculated based on the charge on the gate contact according to Gauss law. Linear, uniform-light and two types of Gaussian dopant distributions have been studied. All the proposed devices improved the figures of merit. The charge density and the electric field under the gate are responsible for limiting the cutoff frequency. Our proposed underlaps with linear and uniform light doping have improved both switching delay and cutoff frequency. We have found that CNTFETs with longer underlaps and lighter doping have superior performance.
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