Abstract
Recently, we have used a simple resistively shunted junction (RSJ) model to analyze the current-voltage characteristics of the superconducting field effect transistor (SUFET) reported by Hatano and coworkers [J. Vac. Sci. Technol. B 7, 1333 (1989)]. In this paper, we compare the results of the simple RSJ model to the more complete SUFET circuit model of Glasser (which includes a magnetic flux-controlled gate voltage term arising from reciprocity arguments). We compare the simple RSJ model of a SUFET to Glasser's model and find the former to be accurate enough to predict the current-voltage characteristics of Hatano et al.'s SUFET, even in the presence of radiofrequency current sources. The magnetic-flux controlled gate voltage introduced by Glasser is calculated as a function of the applied gate voltage in the presence of DC and RF current sources and found to be negligible in Hatano's SUFET.
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