Abstract
A simple method for developing a Schottky IR sensors consisting of metal (pt)- semiconductor (Si-p) is demonstrated in this work. PtSi/Si-p structure is formed by depositing platinum layer over cleaned Si surface using e-beam and embedded by Copper thin film. Current-voltage (I-V) characterization of PtSi/Si with and without copper is made at 77 K. The I-V measurements are made in the presence and absence of electromagnetic wave with infrared source. The result shows a significant increase in photocurrent and higher sensitivity in copper embedded PtSi/Si structure comparing to the conventional PtSi/Si structure. The CuPt layer created over the PtSi layer increases the PtSi sensitivity by trapping infrared radiation. This sensor with small size and high sensitive for IR radiation can be utilized in infrared imageing sensors, nanoplasmonics and nano-Photonics elements. Keywords: Copper, Current-Voltage, Infrared Detector, PtSi
Highlights
In the last decades, metal-insulator layer investigations have attracted a lot of interest for scientists because of the surface Plasmon resonance effect
Surface Plasmon resonance (SPR) combine with potential barrier in metal semiconductor interface is a good candidate to enhance the responsibility of infrared detector[1,2,3,4]
Due to its better efficiency compare to conventional PtSi/ Si structure, the proposed structure in this work may be a better candidate to be used as a high efficient IR detectors
Summary
Metal-insulator layer investigations have attracted a lot of interest for scientists because of the surface Plasmon resonance effect. Surface Plasmon resonance (SPR) combine with potential barrier in metal semiconductor interface is a good candidate to enhance the responsibility of infrared detector[1,2,3,4]. The work function of PtSi is about 4.97 eV and it is possible to create a small potential barrier in Silicon-Platinum interface, enabled to fabricate high performance photodetector[6,7]. The magnitude of their potential barrier is suitable to absorb infrared light. The performance optimization is carried out, in order to reduce the temperatures effect, to increase dark current and sensitivity
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