Abstract
In this study, the charge transport mechanism of Pd/Si-based FS-GaN Schottky diodes was investigated. A temperature-dependent current–voltage analysis revealed that the I-V characteristics of the diodes show a good rectifying behavior with a large ratio of 103–105 at the forward to reverse current at ±1 V. The interface states and non-interacting point defect complex between the Pd metal and FS-GaN crystals induced the inhomogeneity of the barrier height and large ideality factors. Furthermore, we revealed that the electronic conduction of the devices prefers the thermionic field emission (TFE) transport, not the thermionic emission (TE) model, over the entire measurement conditions. The investigation on deep level transient spectroscopy (DLTS) suggests that non-interacting point-defect-driven tunneling influences the charge transport. This investigation about charge transport paves the way to achieving next-generation optoelectronic applications using Si-based FS-GaN Schottky diodes.
Highlights
Gallium nitride (GaN)-related alloys hold great promise for futuristic optoelectronic applications, owing to their prominent physical properties [1,2,3,4]
We explored the charge transport characteristics of the Pd/Schottky diode on Si-based freestanding GaN crystals, elucidating how these influence GaN-based device performance
We proved that the carrier transport in the Schottky diodes is dominated by the thermionic field emission (TFE) conduction, the thermionic emission (TE) one
Summary
Gallium nitride (GaN)-related alloys hold great promise for futuristic optoelectronic applications, owing to their prominent physical properties [1,2,3,4]. To achieve high crystalline freestanding GaN crystals, a number of researchers have studied various growth methods [5,6,7,8,9,10] Of these methods, the outstanding characteristics of hydride vapor phase epitaxy (HVPE) growth, with a high growth rate and a high crystalline growth capability, can provide significant advances to achieve freestanding GaN crystals with a large scalability and economic advantages [11]. The outstanding characteristics of hydride vapor phase epitaxy (HVPE) growth, with a high growth rate and a high crystalline growth capability, can provide significant advances to achieve freestanding GaN crystals with a large scalability and economic advantages [11] Challenges such as size limits (
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