Abstract
Both the charging and orbital quantization energies of InAs quantum dot (QD) typically correspond to the terahertz (THz) region. In this letter, under the asymmetric THz irradiations on two leads, electron transport through a two-level InAs QD is theoretically discussed. We demonstrate that when both the frequencies and amplitudes of THz irradiations on two leads are different with the higher asymmetry, the photon–electron pump effect vanishes, even a negative platform appears on the left of the Coulomb peak and a positive platform occurs on the right of the Coulomb interaction related energy level, respectively. This behavior is favorable for the design of THz optoelectronic device.
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