Abstract
Ultrahigh density well-registered oxide nanocapacitors are very essential for large scale integrated microelectronic devices. We report the fabrication of well-ordered multiferroic BiFeO3 nanocapacitor arrays by a combination of pulsed laser deposition (PLD) method and anodic aluminum oxide (AAO) template method. The capacitor cells consist of BiFeO3/SrRuO3 (BFO/SRO) heterostructural nanodots on conductive Nb-doped SrTiO3 (Nb-STO) substrates with a lateral size of ~60 nm. These capacitors also show reversible polarization domain structures, and well-established piezoresponse hysteresis loops. Moreover, apparent current-rectification and resistive switching behaviors were identified in these nanocapacitor cells using conductive-AFM technique, which are attributed to the polarization modulated p-n junctions. These make it possible to utilize these nanocapacitors in high-density (>100 Gbit/inch2) nonvolatile memories and other oxide nanoelectronic devices.
Highlights
Ultrahigh density well-registered oxide nanocapacitors are very essential for large scale integrated microelectronic devices
We report the fabrication of well-ordered multiferroic BiFeO3 nanocapacitor arrays by a combination of pulsed laser deposition (PLD) method and anodic aluminum oxide (AAO) template method
We have developed well-ordered B iFeO3 (BFO) nanocapacitor arrays with SrRuO3 (SRO) top electrodes on conductive Nb-SrTiO3 (Nb-STO) substrates by the anodic alumina (AAO) template assisted method
Summary
The capacitor cells consist of BiFeO3/SrRuO3 (BFO/SRO) heterostructural nanodots on conductive Nb-doped SrTiO3 (Nb-STO) substrates with a lateral size of ,60 nm These capacitors show reversible polarization domain structures, and well-established piezoresponse hysteresis loops. Apparent current-rectification and resistive switching behaviors were identified in these nanocapacitor cells using conductive-AFM technique, which are attributed to the polarization modulated p-n junctions. These make it possible to utilize these nanocapacitors in high-density The nanocapacitor arrays have well-epitaxial structure, showing apparent ferroelectric polarization and interesting current rectifying resistive switching characteristics They are promising for applications in ultrahigh density recording devices
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