Abstract
The current information technology has been developed based on von Neumann type computation. In order to sustain the rate of development, it is essential to investigate alternative technologies. In a next-generation computation, an important feature is memory potentiation, which has been overlooked to date. In this study, potentiation functionality is demonstrated in a giant magnetoresistive (GMR) junction consisting of a half-metallic Heusler alloy which can be a candidate of an artificial synapse while still achieving a low resistance-area product for low power consumption. Here the Heusler alloy films are grown on a (110) surface to promote layer-by-layer growth to reduce their crystallisation energy, which is comparable with Joule heating induced by a controlled current introduction. The current-induced crystallisation leads to the reduction in the corresponding resistivity, which acts as memory potentiation for an artificial GMR synaptic junction.
Highlights
The current information technology has been developed based on von Neumann type computation
We have recently found a process to lower the crystallisation temperature of a ternary/quaternary Heusler alloy film by growing on the (110) plane[3]
We have demonstrated the crystallisation of a Heusler alloy film with the (110) surface in a giant magnetoresistive (GMR) junction by introducing a current pulse, of which amplitude is greater than the typical sensing current
Summary
The current information technology has been developed based on von Neumann type computation. We have demonstrated the crystallisation of a Heusler alloy film with the (110) surface in a giant magnetoresistive (GMR) junction by introducing a current pulse, of which amplitude is greater than the typical sensing current.
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