Abstract
This paper presents a comprehensive study of symmetric lateral bipolar junction transistors (LBJTs) fabricated on SOI substrate using a CMOS-compatible process; LBJTs find many applications including being a local signal amplifier for silicon-nanowire sensors. Our LBJTs are characterized by a peak gain $(\beta)$ over 50 and low-frequency noise two orders of magnitude lower than what typically is of the Si02/Si interface for a MOSFET. $\beta$ is found to decrease at low base current due to recombination in the space charge region at the emitter-base junction and at the surrounding Si02/Si interfaces. This decrease can be mitigated by properly biasing the substrate.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
