Abstract
In this work, a phase-change memory (PCM) with self-assembled nanostructures and an oxidized thin phase-change layer is proposed and intensively investigated for low writing reset current by finite element analysis. Current density is significantly enhanced in our nano-contact memory because of the existence of nanostructures and oxidized phase-change layer. The writing current of our proposed memory is about 1/10-3/10 that of conventional cell, which is in good agreement with our experimental results. The heat efficiency in the nano-contact PCM cell is greatly improved and its power consumption can be as low as about 1/10 that of the conventional cell.
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