Abstract
Thin film current controlled negative differential resistance (CNDR) devices using amorphous (a)-CdAs 2 as the active material have been fabricated and studied in detail. Comparison of the data on temperature dependence of the turnover voltage V T with data on low field conductivity has shown that the turnover mechanism arises from Joule heating, with bulk space charge limited current effects setting in for thin (<1 μ m) film devices operated below room temperature. Measurements made as a function of device area and a-CdAs 2 film thickness lend further support to this conclusion. Additional data on fabrication yield and uniformity show that large area arrays of a-CdAs 2 CNDR devices are feasible.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
