Abstract
High-quality p-type CuInO2 epitaxial thin films with a bandgap of ∼3.99 eV were grown on epitaxial GaN (001) (epi-GaN) wafers by using pulsed laser deposition technology. At a constant growth temperature of 750 °C, the quality of the CuInO2 thin film increases with the decrease in oxygen pressure within the range of 0.09–1 Pa. For the single crystal film obtained at 0.09 Pa, the epitaxial relationship between the film and the substrate is determined to be CuInO2 (001) || GaN (001) with CuInO2 〈100〉 || GaN [100]. The self-powered ultraviolet photodetector prepared based on the highest quality film shows high photoresponsivity 0.31 mA/W and fast response speed (rise time: 0.34 s, decay time: 0.34 s) at zero voltage under 254-nm UV-light, meaning good solar-blind photoresponsivity.
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