Abstract
Cu2ZnSnSe4 (CZTSe) thin films were deposited on Mo-coated soda–lime glass substrates by single-stage co-evaporation process and the effect of substrate temperature (Tsub) was investigated on the CZTSe thin film growth during the process. The film thickness decreased and the grain size increased with increasing Tsub. The optimum substrate temperature to obtain CZTSe films was found to be 593K. The film grown at Tsub of 773K seems to have the phase decomposition into CuxSe and ZnSe, probably because of Sn loss during the process. The best cell fabricated with a CZTSe absorber layer grown at Tsub of 593K produced 2.88% of conversion efficiency.
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