Abstract
Polycrystalline Cu(In,Ga)S2 (CIGS) nanowire arrays (NWAs) are synthesized for the first time via a solvothermal method using Cu2S NWAs as self-sacrificial templates. The average diameter and length of the as-synthesized CIGS nanowires are 350 nm and 5 μm, respectively. Based on the experimental results, a novel cation-exchange growth mechanism is proposed. The In3+ and Ga3+ ions diffuse inward while the Cu+ ions outward during the solvothermal reaction, resulting in the formation of CIGS with keeping the original nanowire morphology. We have also investigated the photoelectrochemical performance of CIGS NWAs compared with the pristine Cu2S templates. The photocurrent density and optimal incident photon to current efficiency of CIGS NWAs are 0.39 mA cm−2 and 6% at 450 nm, respectively, which are much higher than those of the Cu2S templates. The reported method will lay a foundation for the synthesis of other multi-compound (ternary and above) metal chalcogenides for PEC applications.
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