Abstract
Reflection x-ray topography has been used to show that incoherent radiation annealing of complete 2-in.-diam GaAs wafers results in extensive crystallographic slip networks. These slip lines are believed to be due to small temperature nonuniformities induced during the anneal by both edge radiation and thermal mass effects. The use of a series of annular guard rings around the wafer during the anneal is shown to reduce both the severity and the number of slip lines.
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