Abstract
The phase transition properties of Mg35Sb65/Sb multilayer thin films were studied, including the crystallization mechanism, surface morphology, atomic bonding mode and adhesion strength. With the increase of the thickness of Mg35Sb65 interlayers, Mg35Sb65/Sb thin film had better thermal stability and lower electrical conductivity. The growth-dominated crystallization mechanism made Mg35Sb65/Sb have ultra-fast phase change speed. The subtle change on surface morphology was ascribed to the grain growth and interface stress during crystallization. The scratch test revealed the adhesion strength contrast before and after crystallization. This work showed that Mg35Sb65/Sb multilayer film was a potential material with fast speed and good thermal stability for phase change memory application.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
