Abstract
In this study, we propose a novel laser-crystallization technique by employing a double-layered Si thin films substrate for solid green laser anneal (GLA) crystallization, named GLADLAX (Green Laser anneal Double Layer X'tallization). Simultaneous crystallization of both the upper and the lower a- Si films of the substrate in a single laser scan was successfully achieved, with the upper a-Si becoming poly-Si with fine crystallinity, and the lower one, μc-Si. In addition, it was found that approximately 30% of the laser energy was reduced to obtain nearly the same grain size of the upper poly-Si formed through the GLADLAX technique, compared with that of the conventional GLA crystallized single layer poly-Si. Furthermore, we fabricated thin-film transistors using the upper Si film of GLADLAX poly-Si as their active channels, and found they had excellent switching performance, with their mobility exceeding 350cm2/Vs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.