Abstract
The effects of aluminum nitride (AlN) buffer layers on the superconducting properties of MgB2 thin film were investigated. The AlN buffer layers and as-grown MgB2 thin films were deposited in situ using the multiple-target sputtering system. The best depositing condition for the AlN/MgB2 bi-layer occurred when the AlN was deposited on c-cut sapphire substrates at 290°C. The crystallinity of the AlN/MgB2 bi-layer was studied using the XRD ϕ-scan and it showed that AlN and MgB2 had the same in-plane alignment rotated at an angle of 30° as compared to c-cut sapphire. The critical temperature of the MgB2 film was 29.8K and the resistivity was 50.0μΩcm at 40K.
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