Abstract
The crystalline structures of GaAs/GaAsP layers used for spin-polarized electron sources have been investigated by X-ray diffraction. The specimens are composed of a thin GaAs layer (85–310 nm) on a thick GaAsP layer (2 µm) grown on a (001) surface GaAs substrate by metal-organic vapor phase epitaxy. Both the GaAs and the GaAsP layers possess the same mosaic structure. The mosaic is anisotropic and orientated only within the (110) surface.
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