Abstract
A new radical cation salt based on bis(ethylenedithio)tetrathiafulvalene (BEDT-TTF) with the tetrahedral anion GaCl 4 − , namely, (BEDT-TTF)4(GaCl4)2 · C6H5CH3, has been synthesized. The crystal structure of this salt is determined by X-ray diffraction analysis [a = 31.757(2) A, b = 6.8063(3) A, c = 34.879(2) A, β = 90.453(4)°, V = 7538.8(7) A3, space group I2/c, and Z = 4]. In the structure, the radical cation layers alternate with the anion layers along the c-axis. The anion layers consist of the GaCl 4 − tetrahedra and solvent molecules. The packing of BEDT-TTF molecules in the radical cation layer differs from that in the structure of the known salt (BEDT-TTF)2GaCl4, even though both compounds exhibit semiconductor properties.
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