Abstract
CsIn7S9, orthorhombic, Pmmn (No. 59), a = 24.744(5) Â, b = 3.913(1) Â, c= 8.974(2) A, V = 868.9A, Z= 2, R&(F) = 0.019, /?w(F) = 0.039, Τ = 293 Κ. Source of material CsN3 and a mixture of prereacted indium and sulfur in the ratio of 7:9 (at 1070 K) is heated to 670 Κ under a dynamical vacuum to decompose the CsN3. The resulting product is heated in an evacuated quarz glass ampoule up to 1170 Κ for 3 hours and quenched in icewater. After homogenization the raw product is annealed for 2 weeks at 973 K. Discussion CsIn7S9 ([Cs][In2]2[Inb[S]9, crystallizing in a new structure type, is the first example of a mixed valence cesium indium sulfide. In contrast to the hitherto known ternary cornTable 2. Atomic coordinates and displacement parameters (in Â). Atom Site χ y ζ Acknowledgment. This work was supported by the Deutsche Forschungsgemeinschaft.
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