Abstract
Barium tin titanate Ba(Sn 0.15Ti 0.85)O 3 (BTS) thin films with (1 0 0), (1 1 0) and (1 1 1) orientation were grown on (1 0 0), (1 1 0) and (1 1 1) LaAlO 3 (LAO) single-crystal substrates through sol–gel process, respectively. The in-plane dielectric properties of the films were measured on interdigital capacitor (IDC). Films with the (1 1 1) orientation had larger relative dielectric constant and larger tunability against the dc bias electric field than (1 0 0)- and (1 1 0)-oriented films. This difference in dielectric properties in these three kinds of oriented BTS films may be attributed due to change in the direction and magnitude of electric polarization in orientation engineered BTS films. This work clearly reveals the dielectric properties of BTS films exhibited a strong sensitivity to crystal orientation.
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