Abstract
The crystal growth of ZnSe was performed by chemical transport using iodine as the transport agent. The growth parameters were : source zone temperature ; 1098-1123 K, temperature difference between source and growth zones ; 25 - 50 K, and amount of iodine (M) ; 0.10∼30 kg/m 3 . The transport rate was measured experimentally and calculated by using thermodynamical data and gas-phase transport equation. With an increase of M, the observed transport rate was divided into three regions ; a gradual increase at M 5.0 kg/m 3 where fine granular, block-form and needle-like crystals resulted, respectively. The observed transport rate was almost along the calculated one which reproduced the steep increase in the transport rate at M> 5.0 kg/m 3 . The results indicate that the transport was limited by the diffusion and laminar flow in the gas phase at M≤5.0 kg/m 3 and then modified by the thermal convection at M>5.0 kg/m 3 . All the grown crystals only showed the self-activated emission peak in photoluminescence spectra indicating the presence of non-radiative recombination centers. Those centers were attributed to the defects caused from the Se 2 overpressure and the iodine incorporation in the crystals.
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