Crystal growth of Cd 1− x−yMn xHg yTe 1− zSe z by a zone-melt method using a pressurized cast ingot

Abstract

II–VI diluted magnetic semiconductor of Cd 1− x−y Mn x Hg y Te 1− z Se z crystal ( 0.1<x , y <0.3, 0⩽z⩽0.02 ) has a high Hg vapor pressure at a temperature of crystal growth from a melt and also has temperature–composition phase diagrams with a wide solid solution. A quenched polycrystal ingot starting from a stoichiometric Cd 1− x−y Mn x Hg y Te 1− z Se z melt was scaled up to a large size (20 mm diameter by 30 mm length) using a high-pressure synthesizing furnace, where a sealed quartz ampoule is subject to a high external pressure of argon gas (e.g. 14.0 MPa at 1060°C). Using this quenched polycrystal ingot, a large oriented single crystal has been grown by the zone melt method (ZM) for the first time. It has a large size (20 mm diameter by 25 mm length), low insertion loss (0.2 dB at 0.98 μm) and compositional uniformity both in the axial and radial directions.