Abstract
This paper describes our recent research in growing large single crystals of Cd0.9Zn0.1Te (CZT) by the vertical Bridgman technique using in-house processed zone refined precursor materials (Cd, Zn, and Te). The grown semi-insulating CZT crystals have shown high promise for high-resolution room-temperature radiation detectors due to their high dark resistivity (~1010 Ωcm), reasonably good charge transport properties [(μτ)e = (2-5) x 10-3 cm2/V] and low cost. The grown CZT single crystals (~2.5 cm diameter and up to 10 cm long) have demonstrated a very low radial Zn concentration deviation, low dislocation densities and Te precipitate/inclusions, and high infrared transmission. Details of the CZT single crystal growth, their physical and chemical analysis, surface processing, nuclear radiation detector fabrication, and testing of these devices are also presented.
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