Abstract

Here we summarize recent progress on the study of spin ladder compounds, La 2Cu 2O 5 (four-leg) and La 8Cu 7O 19 (five-leg), n=2 and 3 members of the homologous series La 4+4 n Cu 8+2 n O 14+8 n . Following the successful crystal growth of La 2Cu 2O 5, we grew a pure-phase five-leg system La 8Cu 7O 19 by a modified slow cooling method. The room-temperature resistivity of the as-grown La 8Cu 7O 19 crystal was 1.9 Ω cm, which is much lower than that of the La 2Cu 2O 5 crystals (≈1 .7×10 3 Ω cm). A significant drop in the resistivity (11.0 m Ω cm at 300 K) was observed upon hole doping by means of high oxygen-pressure annealing, although no transition was observed from the semiconducting behavior. In addition, a new crystal growth method to enhance hole doping level of La 2Cu 2O 5 is shown.

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