Abstract

Shape-anisotropy magnetic tunnel junction (MTJ) [1], having a cylindrical free layer, is promising for deeply scaled spin-transfer torque magnetoresistive random access memory (STT-MRAM). In shape-anisotropy MTJs, positively utilizing the shape anisotropy as well as the interfacial anisotropy allows one to reduce the MTJ diameter D below 10 nm while simultaneously keeping the thermal stability factor Δ high and capability of STT switching [1-4]. Of particular interest in the shape-anisotropy MTJs is the magnetization reversal mode, which is critical in quantifying Δ with high accuracy. In the conventional interfacial-anisotropy MTJs with such a small size (D < 30 nm), magnetization dynamics of the free layer can be reasonably described by a single-domain (coherent reversal) model. On the other hand, in shape-anisotropy MTJs, micromagnetic simulation in previous studies suggests that magnetization reversal mode depends not only on D but also on the thickness t; the MTJs with too-thick a free layer (t > ~30 nm) switch incoherently, imposing an upper limit of Δ and also causing a switching delay [2,5]. In this study, we experimentally study the magnetization reversal mode in shape-anisotropy MTJs with various free layer thicknesses and diameters to reveal the crossover of coherent/incoherent reversal.A stack structure of, from the substrate side, Ta (5)/Ru (10)/Ta (15)/synthetic ferrimagnetic reference layer/MgO/(Co0.25Fe0.75)75B25 (t = 15, 30, and 50)/MgO/Ru (5) is deposited by dc/rf magnetron sputtering on a thermally oxidized Si substrate. The numbers in parentheses are nominal thicknesses in nm and t represents the free-layer CoFeB layer thickness. For some samples with t = 50 nm, Ta (5) capping layer is used instead of MgO, which is confirmed to have little impact on the findings described below. The stacks are processed into circular MTJs with various D by electron beam lithography, reactive ion etching, and multistep Ar ion milling [1]. To study the magnetization reversal mode, we evaluate astroid curves by measuring the magnetic-field-angle dependence of switching fields [6,7]. We also investigate the thickness range in which the coherent reversal model is applicable by comparing Δ values experimentally determined under an assumption of the coherent reversal and those expected from the calculation.Figure 1 shows the magnetic-field-angle dependence of a switching field in a cartesian coordinate, the so-called astroid curve, for the shape-anisotropy MTJs with t of 15 nm and 50 nm. The solid curve is the best fit based on the coherent reversal model as used in [6]. As can be seen, the fitting degree is different for each t. For t = 15 nm, the experimental result is well explained by the fit, indicating a coherent reversal, which is consistent with the previous result on a FeB-based shape-anisotropy MTJ with the same free-layer thickness [5]. On the other hand, for the t = 50 nm case, the fit is poor; the switching field along the easy-axis (μ0Hx = 0 mT, where μ0 is the permeability in vacuum) is smaller compared with the other angles (|μ0Hx| > 0). Such a distortion is also seen for t = 30 nm with D > ~15 nm. Similar behavior was reported in a Py nanowire, and was explained by a buckling mode [9]. The similarity suggests that magnetic moments in the shape-anisotropy MTJs with a thicker and larger-diameter free layer is reversed incoherently via an oscillatory buckling along the thickness direction.Next, we measure the switching probability using a pulsed magnetic field and evaluate Δ with a coherent reversal model [10]. The obtained Δ is plotted as a function of D in Fig. 2. The solid curves represent the calculation based on the coherent reversal model, where the whole volume contributes to the energy barrier. For D < ~15 nm, the measured Δ value agrees well with the calculated one, whereas D > ~15 nm is much smaller, backing up interpretation of the difference observed in the astroid-curve measurement as crossover of the magnetization reversal mode.In summary, we investigate the magnetization reversal mode and thermal stability factor in shape-anisotropy MTJs with various free-layer thicknesses and diameters. We reveal that the magnetization reversal in the MTJs with thicker and larger-diameter free layer proceeds incoherently, affecting the retention property. This study provides a key understanding of the magnetization reversal in the shape-anisotropy MTJs.This work was supported in part by JST-OPERA, JSPS KAKENHI (JP19J12926 and JP19K04486), and DIARE. J.I. and K.W. acknowledge financial support from GP-Spin and JST-OPERA. **

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