Cross sections for electron collision with difluoroacetylene

Abstract

We report a detailed calculation of total elastic, differential elastic, momentum transfer and electronic excitation for electron impact on difluoroacetylene (C2F2) molecules using the R-matrix method at low energies. After testing many target models, the final results are reported for the target model that gave the best target properties and predicted the lowest value of the shape resonance. The shape resonance is detected at 5.86 eV and 6.49 eV with the close-coupling and static exchange models due to 2Πg (2B2g, 2B3g) states. We observed that the effect of polarization becomes prominent at low energies below 4 eV, decreasing the magnitude of the elastic cross section systematically as it increases for C2F2. We have also computed elastic cross sections for C2H2, C2F4 and C2H4 with a similar model and compared with the experimental data for these molecules along with C2F2. General agreement is found in terms of the shape and nature of the cross section. Such a comparison shows the reliability of the present method for obtaining the cross section for C2F2. The calculation of elastic scattering cross section is extended to higher energies up to 5 keV using the spherical complex optical potential method. The two methods are found to be consistent, merging at around 12 eV for the elastic scattering cross section. Finally we report the total ionization cross section using the binary encounter Bethe method for C2F2. The perfluorination effect in the shape and magnitude of the elastic, momentum transfer and ionization cross sections when compared with C2H2 showed a similar trend to that in the C2H4–C2F4 and C6H6–C6F6 systems. The cross-section data reported in this article could be an important input for the development of a C2F2 plasma model for selective etching of Si/SiO2 in the semiconductor industry.