Abstract

Effects of Cr-, Mo-, W-, and Nb-doping and annealing processing on the microstructures and ferroelectric properties of chemical-solution-deposited Bi3.5Nd0.5Ti3O12 (BNT) and Bi3.25La0.75Ti3O12 (BLT) films and sputtered Bi3.55Pr0.48Ti3O12 (BPT) films were studied. For Cr-doped BNT and BLT films Cr(superscript 3+) replacing Ti(superscript 4+) can reduce remnant polarization (2Pr) because of the reduction of the grain size, the enhancement of c-axis oriented growth, and the increase of oxygen vacancies. For Nb-doped BNT (BNTNx) and BLT (BLTNx) films Nb(superscript 5+) replacing Ti(superscript 4+) can increase the 2Pr up to 43 and 35μC/cm^2 at x=0.005 and then decrease the 2Pr for x larger than 0.03, respectively. For BPT films the two-step annealing, i.e., first annealed at 625℃ before deposition of upper Pt electrodes and then annealed at 750℃ after deposition, can significantly improve the ferroelectric properties as compared with the one-step annealing, i.e., only annealed at 750℃. The reason can be attributed to the less interface reactions between the film and Pt electrodes for the two-step annealing than for the one-step annealing. For Mo- and W-doped BPT films (BPTMx and BPTWx) the 2Pr increases up to 31 and 35μC/cm^2 at x=0.01 and then decreases for x larger than 0.03, respectively.

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