Abstract
Studies on deep electron traps in n-InP treated with hydrogen plasma have been performed using isothermal capacitance transient spectroscopy measurements. Five electron trap levels, E1–E5, with activation energies of 0.21, 0.51, 0.32, 0.54, and 0.63 eV, respectively, below the conduction band are detected. Only E1 traps are observed in as-etched InP. Hydrogen-plasma treatment leads to enhancement of the density of E1 traps and creation of E2 and E5 traps. E1 and E5 traps are annealed out at 300 °C, while E2 traps are annealed out at a temperature as low as 150 °C. On the other hand, densities of E3 and E4 traps are significantly enhanced by annealing at 350 °C. This experimental result suggests that the E3 and E4 traps are generated during hydrogen-plasma exposure and are passivated by hydrogen atoms.
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