Abstract
Due to their wurzite structure, GaN quantum wells and dots arecharacterized by large built-in piezoelectric fields.These induce a spatial separation between the confined electron andholes, thus favouring the formation of electric dipoles.Here, we theoretically investigate the effects of the long-range,dipole-dipole interaction between two excitons in a GaN/AlxGa1-xNmicrodisk.These Coulomb interactions are shown to strongly affect the biexcitonground state. In particular, they induce strong spatial correlationsbetween the two excitons and result in biexciton binding energiesof the order of 1 meV.
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